YJJ S12060-10 Silicon APD Low Temperature Coefficient For 800 nm Band

Product Description:

S12060-10 Silicon APD Low Temperature Coefficient For 800 nm Band

Features:

Low temperature coefficient for 800 nm band

This is an 800 nm near-infrared silicon APD for stable operation over a wide temperature range. This is suitable for applications such as light wave distance meters and spatial light transmission (free space optics).

peculiarity

- Breakdown voltage temperature coefficient: 0.4V /°C

- High speed response

- High sensitivity and low noise

Type Near infrared type

(Low temperature coefficient)

Receiving surface φ1mm

Encapsulation metal

Package category TO-18

Maximum sensitivity wavelength (typical value) 800 nm

Sensitivity wavelength range 400 to 1000 nm

Photosensitivity (typical value) 0.5A /W

Dark current (Max.) 2 nA

Cut-off frequency (typical value) 600 MHz

Junction capacitance (typical) 6 pF

Breakdown voltage (typical value) 200 V

Breakdown voltage temperature coefficient (typical value) 0.4 V/°C

Gain rate (typical value) 100

Measurement conditions Typical value Ta = 25°C, unless otherwise stated,

Sensitivity: λ = 800 nm, M = 1

Specifications:

Low Temperature Coefficient Silicon APD

800 nm Band Silicon APD

YJJ S12060-10 Silicon APD Low Temperature Coefficient For 800 nm Band Images